Plans for upcoming NVNA Users' Forums

Thursday June 6, 2019 in Westin Harbor Ballroom 3

Agenda (Final):

  • 15:30 Forum Starts
     

  • 15:30-15:35
    Welcome 
    Prof. Karun Rawat, IIT Roorkee

  • 15:35-16:00 
    Large-Signal Characterization of SOI MOSFETs Using NVNA and Active Load-Pull 

    Dr. Manuel Pulido, Andres Zarate, pSemi Corp. A Murata Co.

    In this talk, pSemi(TM) Modeling Group will present SOI MOSFETs device characterization and validation using a combination of mixer-based NVNA and new active load control (ALC) PNAX feature from Keysight(TM). Measurement result summary will be shown of what works while highlighting instrumentation challenges encountered so far during critical non-linear measurement points.
     

  • 16:00-16:10
    Discussion: Use of NVNA in device characterization and model validation

     

  • 16:10-16:35
    Large Signal Characterization of Dual-Input PAs

    Chenyu Liang(1) and Thaimi Niubo Aleman(2),(1) (PhD students)
    (1)The Ohio State University, (2) CICESE Ensenada

    This presentation will discuss the testbeds used at OSU to characterize the large-signal response of new types of dual-input outphasing PAs for both CW and modulated excitations. Three different testbed solutions (LSNA, FPGA or NVNA based) will be presented. The procedures used for aligning the phase, calibrating the amplitude and synchronizing the modulation of the two input signals will be reviewed for both CW or LTE/OFDM modulated measurements. Measured results on the PA efficiency versus outphasing angles and PA linearization will be presented for dual-input Doherty, Chireix and Hybrid PAs.
     

  • 16:35-16:45
    NIST Approach to Calibrating an LSNA on an Arbitrary Frequency Grid 
    Aric Sanders, National Institute of Standards and Technology
     

  • 16:45-16:55
    Discussion & Feedback​

     

  • 16:55-17:00
    Farewell​

     

  • 17:00 Forum Ends
     

 

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